Energy Level Engineering in InxGa1-xAs/GaAs Quantum Dots Applicable to Quantum Dot-Lasers by Changing the Stoichiometric Percentage

摘要

Band edge and energy levels of truncated pyramidal InxGa1-xAs/GaAs (001) quantum dots are studied by single-band effective mass approach, and the dependence to stoichiometric percentages is investigated. It is shown that similar to studies on bulk samples, enhancement of indium percentage in quantum dot nanostructures decreases the band gap and the recombination energy of electrons and holes. Our principal result is that decrease of recombination energy and band gap is nonlinear, and the slopes are different for band gap and e-h recombination energy. In addition, it is proved that strain tensor is diagonal along z-axis and the absolute value of the components gets larger by more indium inclusion. Our results appear to be in very good consonance with similar studies.