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首页> 外文期刊>Journal of nanoscience and nanotechnology >Thermal Annealing Dependence of High-Frequency Magnetoimpedance in Amorphous and Nanocrystalline FeSiBCuNb Ribbons
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Thermal Annealing Dependence of High-Frequency Magnetoimpedance in Amorphous and Nanocrystalline FeSiBCuNb Ribbons

机译:非晶和纳米晶FeSiBCuNb带中高频磁阻抗的热退火依赖性

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摘要

The magnetoimpedance (Ml) effect in Fe{sub}73.5Si{sub}13.5B{sub}9Nb{sub}3Cu{sub}1 melt-spun amorphous ribbons has been studied in the frequency range (1-500 MHz). Isothermal heating treatments in a furnace have been employed to nanocrystallize the ribbons (1 h at 565 ℃ in a vacuum of 10{sup}(-3) mbar), while other samples were annealed at lower temperatures (400 and 475 ℃ during 1 h), in order to evaluate the influence of the annealing temperature on the Ml effect. The high-frequency impedance was measured using a technique based on the reflection coefficient measurements of a specific transmission line by using a network analyzer. Frequency dependence of the Ml ratio, ΔZ/Z, and both resistive, ΔR/R, and reactive, ΔX/X, components of magnetoimpedance were measured in the amorphous and annealed states, at different temperatures. A maximum value of the Ml ratio of about 50% at a driving frequency of 18 MHz is obtained in the nanocrystalline (annealed at 565 ℃) ribbon. Maxima for AR/R of about 81% at 85 MHz and ΔX/X around 140% at 5 MHz were also achieved. It is revealed that the microstructural evolution in the nanocrystalline sample leads to a magnetic softening, an optimum domain structure and a permeability which is sensitive to frequency and applied magnetic field, generating a large Ml response.
机译:已在频率范围(1-500 MHz)中研究了Fe {sub} 73.5Si {sub} 13.5B {sub} 9Nb {sub} 3Cu {sub} 1熔纺非晶带中的磁阻抗(Ml)效应。已采用炉中的等温热处理使碳带纳米晶化(在565℃下1 h,真空度为10 {sup}(-3)mbar),而其他样品在较低温度下(400和475℃退火1 h)进行退火。 ),以评估退火温度对M1效应的影响。使用网络分析仪,基于特定传输线的反射系数测量值的技术,测量高频阻抗。在不同温度下,在非晶态和退火态下,测量了M1比ΔZ/ Z以及电阻性ΔR/ R和电抗性ΔX/ X的频率依赖性。在纳米晶体(在565℃退火)条带中,在18 MHz的驱动频率下,M1比率的最大值约为50%。在85 MHz时,AR / R的最大值约为81%,在5 MHz时,ΔX/ X约为140%。揭示了纳米晶体样品中的微结构演变导致磁软化,最佳的畴结构和对频率和施加的磁场敏感的磁导率,从而产生大的MI响应。

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