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首页> 外文期刊>Journal of nanoscience and nanotechnology >Novel Methods of Forming Self-Assembled Nanostructured Materials: Ni Nanodots in Al{sub}2O{sub}3 andTiN Matrices
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Novel Methods of Forming Self-Assembled Nanostructured Materials: Ni Nanodots in Al{sub}2O{sub}3 andTiN Matrices

机译:形成自组装纳米结构材料的新方法:Al {sub} 2O {sub} 3和TiN矩阵中的Ni纳米点

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摘要

We have developed two novel methods of growing self-assembled nanodot arrays of uniform size (diameter 2-50 nm) of a variety of materials in crystalline as well as amorphous matrices. These methods employ a pulsed laser deposition technique and are classified as: (a) sequential growth method; and (b) simultaneous growth method. In the first method, the nanodots and matrix material are formed sequentially, while in the second method, nanodots and matrix materials grow simultaneously. In the sequential growth, self-assembly of nanodots is controlled by the flux of materials, interfacial energy, intervening matrix layer, substrate and laser parameters. For the simultaneous growth method of self-assembly of nanodots, there is additional requirement that the material of the nanodot and the matrix should be such that the Gibb's free energy of oxidation of the constituent of matrix material is much lower than that of the nanodot material.
机译:我们已经开发了两种新颖的方法,可以在晶体和非晶态基质中生长各种尺寸的均匀大小(直径2-50 nm)的自组装纳米点阵列。这些方法采用脉冲激光沉积技术,并分类为:(a)顺序生长法; (b)同时生长法。在第一种方法中,纳米点和基质材料顺序形成,而在第二种方法中,纳米点和基质材料同时生长。在连续生长中,纳米点的自组装受到材料通量,界面能,居间基质层,衬底和激光参数的控制。对于纳米点的自组装的同时生长方法,还要求纳米点和基质的材料应使得基质材料的成分的氧化吉布自由氧化能比纳米点材料的低得多。 。

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