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Estimate of the plasmonic enhancement for the erbium arsenide (metallic nanoparticle): indium arsenide (quantum dot) system

机译:砷化((金属纳米粒子):砷化铟(量子点)系统的等离子体增强估计

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摘要

The epitaxially grown system comprising semimetallic ErAs (erbium arsenide) nanoparticles (MNP) and InAs (indium arsenide) single quantum dots (QDs) hold great promise for plasmonic applications. The distinguishing feature of the ErAs-InAs hybrid is that the hybrid separation can be varied and accurately controlled in the molecular-beam epitaxial growth. In order to assess the potential of this system for plasmonic applications, this paper aims to estimate and optimize the expected magnitude of the plasmonic enhancement. We use the Sun-Khurghin theory to estimate the expected absorption and photoluminescence (PL) enhancement. Using a carefully selected set of materials' parameters as input, we predict about 500-fold plasmonic PL enhancement for this system under resonant conditions. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
机译:包含半金属ErAs(砷化er)纳米粒子(MNP)和InAs(砷化铟)单量子点(QD)的外延生长系统在等离激元应用中具有广阔的前景。 ErAs-InAs杂化体的显着特征是可以在分子束外延生长中改变杂化体的间隔并精确控制。为了评估该系统在等离子体应用中的潜力,本文旨在评估和优化等离子体增强的预期幅度。我们使用Sun-Khurghin理论来估计预期的吸收和光致发光(PL)增强。使用一组精心选择的材料参数作为输入,我们预测在共振条件下该系统的等离子PL增强约500倍。 (C)2015年光电仪器工程师协会(SPIE)

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