High-resolution electron microscopic studies of the interfaces between IBAD molybdenum and Al_2O_3(0001) substrate

摘要

Metal-ceramic interfaces play an important role in composites, electronic packaging systems, thin-film technology and joining metal-ceramic. With the development of high-resolution electronic micro-scopy (HREM) and cross-sectional specimen-pre-paration techniques, systematic studies of metal--ceramic interfaces, at the atomic scale, started in the 1980s [1]. Since then most of the experimental studies and theoretical calculations were originally performed on the examples serving as "model" systems (e.g. Nb/Al2O3 [2], Ag/MgO [3] interfaces), formed either by diffusion-bonding, internal oxida-tion or epitaxial film growth, where the lattice mismatch is small and both components possess the same lattice symmetry. Molybdenum films in inte-grated forms have various applications where high-temperature performance and high electronic conductivity are required. Al2O3(Q001) has been used as a substrate for molybdenum films because of its low dielectric loss, high mechanical strength and good insulating properties. However, little work has been done on the Mo/A^O.i interface in spite of its importance.