In a plasma-assisted process, such as sputtering deposition and plasma display, the negatively biased electrode (cathode) is under bombardment from energetic particles, leading to the sputtering of atoms. Estimation of sputtering rate on the cathode is always of great interest to scientists and engineers in the relevant industries. In this paper, an approach combining a sputtering model and Monte Carlo simulation is proposed to calculate the sputtering rate during a plasma-assisted process. This approach is proved to be satisfactory by comparing the calculated sputtering rates with some experimental results obtained from sputtering of Cr targets.
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