Chemical vapour deposition of silicon carbide by pyrolysis of methylchlorosilanes

摘要

Silicon carbide (SiC) prepared by chemical vapour deposition (CVD) remains of importance for both structural [1,2] and electronic [3,4] applications. A variety of gaseous precursors has been used for SiC deposition under widely varying conditions of input gas composition, temperature and pressure [5]. For CVD of SiC, in general, a carrier gas is bubbled through a silicon containing liquid mixed with another stream of carrier gas. The necessary carbon is either contained in the chlorosilane or supplied by introducing a hydrocarbon.