Growth of wurtzite GaN on (001)GaAs substrates at low temperature by atomic layer epitaxy

Huang SC.; Hsu CJ.; Gong JR.; Chiang CI.; Tu SL.; Chang H.; Wang HY.

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Growth of wurtzite GaN on (001)GaAs substrates at low temperature by atomic layer epitaxy

机译：原子层外延在低温下在（001）GaAs衬底上生长纤锌矿GaN

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来源
《Journal of Materials Science Letters》 |1998年第15期|共5页
作者
Huang SC.; Hsu CJ.; Gong JR.; Chiang CI.; Tu SL.; Chang H.; Wang HY.;
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正文语种 eng
中图分类工程材料学;
关键词
Chemical-vapor-deposition; Movpe growth; Cubic gan; Gaas; Nh3;

机译：化学气相沉积;Movpe生长;立方氮化镓;Gaas;Nh3;

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专利

1. Growth of wurtzite GaN on (001)GaAs substrates at low temperature by atomic layer epitaxy [J] . Huang SC., Hsu CJ., Gong JR., Journal of Materials Science Letters . 1998,第15期

机译：原子层外延在低温下在（001）GaAs衬底上生长纤锌矿GaN
2. Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy [J] . Mutsumi SUGIYAMA, Taiki NOSAKA, Tomonori SUZUKI, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第3期

机译：金属有机气相外延法在（001）GaAs衬底上生长具有AlGaN / GaN超晶格下层的立方GaN外延层中的缺陷密度降低
3. Critical Roles of Decomposition-Shielding Layer Deposited at Low Temperature Governing the Structural and Photoluminescence Properties of Cubic GaN Epilayers Grown on (001) GaAs by Metalorganic Vapor Phase Epitaxy [J] . Mutsumi SUGIYAMA, Taiki NOSAKA, Takeyoshi ONUMA, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第1期

机译：低温沉积的分解屏蔽层对金属有机气相外延生长在（001）GaAs上生长的立方GaN外延层的结构和光致发光特性的关键作用
4. EFFECT OF ATOMIC-HYDROGEN TREATMENT OF (001) GaAs SUBSTRATE AT 'HIGH TEMPERATURES' ON RF PLASMA-ASSISTED MOLECULAR BEAM EPITAXY OF CUBIC GaN [C] . Symposium on nitride semiconductors . 1998

机译：（001）GaAs衬底在射频等离子体辅助分子束外延对立方GaN的影响（001）GaAs衬底对氢气的影响
5. Low-temperature chemically-driven atomic layer epitaxy for II-VI material growth. [D] . Luo, Yi. 2000

机译：用于II-VI材料生长的低温化学驱动原子层外延。
6. Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing [O] . Elena Alexandra Serban, Justinas Palisaitis, Chia-Cheng Yeh, -1

机译：反应性磁控溅射外延在单模激光作用下在SiOx / Si（001）衬底上单晶纤锌矿GaN纳米棒的选择性区域生长
7. Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing [O] . Serban, Alexandra, Palisaitis, Justinas, Yeh, Chia-Cheng, 2017

机译：反应性磁控溅射外延在单模激光作用下在SiOx / Si（001）衬底上单晶纤锌矿GaN纳米棒的选择性区域生长

Growth of wurtzite GaN on (001)GaAs substrates at low temperature by atomic layer epitaxy

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