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Method of crystal growth of a GaN layer over a GaAs substrate
Method of crystal growth of a GaN layer over a GaAs substrate
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机译:在GaAs衬底上生长GaN层的方法
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摘要
A method of crystal growth of a GaN layer with an extremely high surface planarity over a GaAs substrate is provided, wherein a GaAs substrate is heated to a temperature in the range of 600° C. to 700° C. without supplying any group-V element including arsenic to form a Ga-rich surface on the GaAs substrate, before a first source material including N and a second source material including Ga are supplied along with a carrier gas onto a surface of the GaAs substrate to form a GaN layer over the GaAs substrate.
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