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Modulation of crystallinity in sputtered vanadium metal thin films grown on ion exchanged glasses

机译:离子交换玻璃上生长的溅射钒金属薄膜中结晶度的调节

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摘要

It is well known that crystallinity in thin films is a very important factor in determining their application as devices. The growth of crystalline thin films by physical vapour deposition techniques requires the optimization of a number of process and related parameters. The effects of rate of deposition, substrate temperature, pressure of operation, conditions of bombardment on the substrate, i.e. energy, flux and angle of bombarding particles, on the crystallinity in thin films have all been investigated in detail. It is also known that the other single most important parameter in controlling the crystallinity of thin films is the substrate on which the films are deposited. Recent work on the growth of high temperature superconducting thin films was especially significant in re-establishing the importance of the choice of substrate in determining the technological applicability of thin film materials [1]. There is, however, continuous work on the development of new substrates and their effects on thin film properties.
机译:众所周知,薄膜的结晶度是决定其作为器件应用的一个非常重要的因素。通过物理气相沉积技术生长晶体薄膜需要优化许多工艺和相关参数。已经详细研究了沉积速率,衬底温度,操作压力,在衬底上轰击的条件,即能量,通量和轰击颗粒的角度对薄膜的结晶度的影响。还已知在控制薄膜的结晶度中的另一个最重要的参数是在其上沉积薄膜的衬底。高温超导薄膜生长方面的最新工作对于重新确定衬底选择对于确定薄膜材料的技术适用性的重要性尤为重要[1]。但是,关于新基板的开发及其对薄膜性能的影响,一直在进行中。

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