Uniform Non-stoichiometric Titanium Nitride Thin Films for Improved Kinetic Inductance Detector Arrays

摘要

We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (KID) arrays. Using a 6 sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 wafer was reduced to 25 %. Measurements of a 132-pixel KID arrays from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminum KIDs. We measured a noise equivalent power of NEP W/Hz. Finally, we describe possible routes to further improve the performance of these TiN KID arrays.