...
首页> 外文期刊>Journal of Low Power Electronics >A Sub-1 V 100 mA Wide Capacitive Load Based Flipped Voltage Follower Low-Dropout Regulator Using Transient-Assisted Embedded Driving Stage
【24h】

A Sub-1 V 100 mA Wide Capacitive Load Based Flipped Voltage Follower Low-Dropout Regulator Using Transient-Assisted Embedded Driving Stage

机译:基于瞬态辅助嵌入式驱动级的低于1 V 100 mA宽容性负载的翻转电压跟随器低压降稳压器

获取原文
获取原文并翻译 | 示例
           

摘要

This paper presents a new low-voltage transient-assisted Flipped Voltage Follower (FVF) based output-capacitorless low-dropout (OCL-LDO) regulator dedicated to drive wide capacitive load (C_L) range using Dual Summed Miller Frequency Compensation (DSMFC) technique. This relies on the use of low-output impedance Transient-Assisted Embedded Driving Stage (TAEDS) to enhance the slew rate at the gate of power transistor during load current (I_L) transitions whilst allowing low quiescent current (I_Q) in low supply. Validated using a UMC 65 nm CMOS technology, the simulation results have shown that the TAEDS regulator can operate for C_L ranging from 10 pF to 10 nF. Under a 0.75 V supply and a 24.6 μA quiescent current, it can deliver a maximum I_L of 100 mA with a 250 mV dropout voltage and no more than 40.4 mV undershoot/overshoot. Without significantly increasing the circuit complexity or compromising the tradeoff for active area, it attains high load capacitance to total on-chip capacitance ratio (C_(L(max))/C_T), with respect to the reported counterparts.
机译:本文介绍了一种新的基于低压瞬态辅助翻转电压跟随器(FVF)的无输出电容器低压降(OCL-LDO)稳压器,该驱动器使用双求和米勒频率补偿(DSMFC)技术来驱动宽容性负载(C_L)范围。这依赖于使用低输出阻抗瞬态辅助嵌入式驱动级(TAEDS)来提高负载电流(I_L)过渡期间功率晶体管栅极的压摆率,同时在低电源下允许低静态电流(I_Q)。仿真使用UMC 65 nm CMOS技术进行了验证,仿真结果表明,TAEDS稳压器可在10 pF至10 nF的C_L范围内工作。在0.75 V电源和24.6μA静态电流下,它可以提供100 mA的最大I_L,具有250 mV的压差电压,且下冲/过冲不超过40.4 mV。在不显着增加电路复杂性或不折衷有效面积的情况下,相对于已报道的同类产品,它可实现高负载电容与总片上电容之比(C_(L(max))/ C_T)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号