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Spatial-OH impurity distribution in gallium phosphate crystals

机译:磷酸镓晶体中的空间OH杂质分布

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摘要

Piezoelectric properties of quartz and quartz-like materials are strongly related to the impurity content in the crystals and, more especially, to their hydroxyl group (-OH) content. This work has been devoted to the determination of the spatial distribution of this impurity in as-grown crystals of gallium phosphate, GaPO4. The investigation was undertaken by infrared spectroscopy from eight samples with different growth conditions and completed by thermally stimulated current/relaxation map analysis techniques. The results allow the best growth parameters to be defined, leading to crystals with the lowest -OH impurity content. (C) 1998 Kluwer Academic Publishers. [References: 34]
机译:石英和类石英材料的压电特性与晶体中的杂质含量密切相关,尤其是与它们的羟基(-OH)含量密切相关。这项工作致力于确定这种杂质在磷酸镓GaPO4生长晶体中的空间分布。该研究是通过红外光谱法对八个具有不同生长条件的样品进行的,并通过热刺激电流/松弛图分析技术完成。结果可以确定最佳的生长参数,从而使晶体具有最低的-OH杂质含量。 (C)1998 Kluwer学术出版社。 [参考:34]

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