And a process for eliminating impurities from the crystals of the process for obtaining a gallium-containing nitride bulk single crystal was obtained, a process for manufacturing a substrate made of gallium-containing nitride bulk single crystal

摘要

The process of eliminating impurities from the crystals of the process for obtaining a gallium-containing nitride bulk single crystal was obtained, the present invention, which aims and to provide a process for manufacturing a substrate made of gallium-containing nitride bulk single crystal to. In supercritical ammonia-containing solvent in which the mineralizer is added, there is provided a process for obtaining mono-crystalline gallium-containing nitride gallium-containing feedstock, the present invention, the process, A first step of converting the feedstock to the gallium-containing nitride from the polycrystalline form of a metal, By gallium-containing nitride is crystallized selectively in single crystal seeds on one, and then gallium-containing nitride is crystallized at least at a temperature higher than the melting temperature of the feedstock feedstock and is gradually dissolved and in the process being characterized in that it has a, a second step is obtained gallium-containing nitride bulk single crystal.