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首页> 外文期刊>Journal of Materials Science >PREPARATION OF BN FILMS BY RF THERMAL PLASMA CHEMICAL VAPOUR DEPOSITION
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PREPARATION OF BN FILMS BY RF THERMAL PLASMA CHEMICAL VAPOUR DEPOSITION

机译:射频热等离子体化学气相沉积法制备BN薄膜

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摘要

Boron nitride films were prepared at 1 atm by r.f. thermal plasma chemical vapour deposition from the gas systems of Ar-BF3-N-2 (or NH3, NF3)-H-2, Ar-BCl3-N-2 (or NH3, NF3)-H-2, and Ar-B2H6-N-2 (or NH3)-H-2. The appearance and the deposition rate of the films changed drastically with the composition of the feed gas. Only from the Ar-BF3-N-2(-NF3) gas, were transparent and smooth films obtained, while from other gas systems, white flaky or powder-like deposits formed. The structure of these films was basically sp(2)-bonded turbostratic BN, and the formation of cubic BN was not confirmed. [References: 17]
机译:氮化硼膜在1 atm at r.f.来自Ar-BF3-N-2(或NH3,NF3)-H-2,Ar-BCl3-N-2(或NH3,NF3)-H-2和Ar-B2H6气体系统的热等离子体化学气相沉积-N-2(或NH3)-H-2。膜的外观和沉积速率随进料气体的组成而急剧变化。仅从Ar-BF3-N-2(-NF3)气体中获得透明而光滑的薄膜,而从其他气体系统中形成白色片状或粉末状沉积物。这些膜的结构基本上是sp(2)键合的涡轮层BN,并没有确认立方BN的形成。 [参考:17]

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