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Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques

机译：电感耦合等离子体化学气相沉积和等离子体增强化学气相沉积技术的GaN / AlGaN Hemts钝化性能分析

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Sunil Kumar; Amit Malik; Dipendra Singh Rawal; Seema Vinayak; Hitendra Malik;
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1. Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques [J] . Kumar Sunil, Malik Amit, Rawal D. S., Defence Science Journal . 2018,第6期

机译：使用电感耦合等离子体化学气相沉积和等离子体增强化学气相沉积技术的GaN / AlGaN HEMT钝化性能分析
2. Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques [J] . Sunil Kumar, Amit Malik, Dipendra Singh Rawal, Defence science journal . 2018,第6期

机译：电感耦合等离子体化学气相沉积和等离子体增强化学气相沉积技术的GaN / AlGaN Hemts钝化性能分析
3. Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition [J] . Romero M.F., Sanz M.M., Tanarro I., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2010,第49期

机译：通过等离子体增强化学气相沉积法沉积的SiN钝化的AlGaN / GaN HEMT的等离子体诊断和器件性能
4. High voltage AlGaN/GaN Schottky barrier diode employing the inductively coupled plasma-chemical vapor deposition SiO2 passivation [C] . Young-Hwan Choi, Jiyong Lim, Kyu-Heon Cho, International Conference on Power Electronics . 2007

机译：采用电感耦合等离子体化学气相沉积SiO 2 钝化，高压AlGaN / GaN肖特基势垒二极管
5. Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors. [D] . Ha, Minh-Trang Teresa. 2016

机译：在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
6. Plasma enhanced chemical vapour deposition of silica onto Ti: Analysis of surface chemistry morphology and functional hydroxyl groups [O] . Endre J. Szili, Sunil Kumar, Roger St. C. Smart, -1

机译：等离子体在Ti上的化学气相沉积二氧化硅：分析表面化学形态和功能性羟基
7. Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition [O] . M F Romero, M M Sanz, I Tanarro, 2010

机译：AlGaN / GaN HEMT的等离子体诊断和装置性质钝化等离子体增强化学气相沉积的SIN

Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques

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