STRUCTURE AND ELECTRICAL PROPERTIES OF VACUUM-DEPOSITED ANTIMONY TELLURIDE THIN FILMS ON AN AMORPHOUS SUBSTRATE

摘要

Sb2Te3 thin films, 50-109 nm thick, have been prepared by vacuum evaporation on to quartz substrates, Electrical properties of as-deposited and annealed films show that the activation energy is thickness dependent. Optical measurements indicate that there is an indirect transition having an energy of 1.9 eV. Transmission electron micrographs show the fine grains of the deposit. [References: 10]