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METHODS OF TRIMMING AMORPHOUS CARBON FILM FOR FORMING ULTRA THIN STRUCTURES ON A SUBSTRATE
METHODS OF TRIMMING AMORPHOUS CARBON FILM FOR FORMING ULTRA THIN STRUCTURES ON A SUBSTRATE
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机译:在基质上修整非晶碳膜以形成超薄结构的方法
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摘要
Methods for forming an ultra thin structure using a method that includes trimming a mask layer during an etching process are provided. The embodiments described herein may be advantageously utilized to fabricate a submicron structure on a substrate having a critical dimension less than 55 nm and beyond. In one embodiment, a method of forming a submicron structure on a substrate may include providing a substrate having a patterned photoresist layer disposed on a film stack into an etch chamber, wherein the film stack includes at least a hardmask layer disposed on an underlying layer, trimming the photoresist layer to a first predetermined critical dimension, etching the hardmask layer through openings defined by the trimmed photoresist layer, trimming the hardmask layer to a second predetermined critical dimension, and etching the underlying layer through openings defined by the trimmed hardmask layer.
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