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首页> 外文期刊>Journal of Materials Science >Application of top seeding in the melt processing of Nd-123 thick films on YSZ substrates: I buffer layer optimization
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Application of top seeding in the melt processing of Nd-123 thick films on YSZ substrates: I buffer layer optimization

机译:顶部晶种在YSZ衬底上Nd-123厚膜的熔融加工中的应用:I缓冲层优化

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摘要

A new concept of a buffer layer in superconducting thick film technology was tested. The idea is based on increasing the NdBa2Cu3Ox melt viscosity at the processing temperature near the substrate by using higher ratios of Nd4Ba2Cu2Oz solid phase in the first screen printed pass which is considered as a buffer layer. Different compositions, thicknesses and thermal schedules were used to optimise the buffer layer. The optimised buffer layer was employed in the fabrication of NdBa2Cu3Oy thick films on yttria stabilized zirconia (YSZ) substrates using the top seeding melt growth (TSMG) technique. Using the buffer layer was effective in preventing a large amount of liquid (BaCuO2-CuO) from severe interaction with the substrate during the prolonged time in the TSMG technique. Consequently, a large superconducting single domain was obtained. Thick films were melt processed in 0.1% O-2 in Ar atmosphere to suppress the Nd1 + xBa2 - xCu3Oy (Nd-123SS) solid solution formation. The produced thick films have high transition temperature (T-C) and improved microstructures. (c) 2005 Springer Science + Business Media, Inc.
机译:测试了超导厚膜技术中缓冲层的新概念。该想法是基于在第一丝网印刷道次中使用较高比例的Nd4Ba2Cu2Oz固相,从而在基板附近的加工温度下提高NdBa2Cu3Ox熔体粘度,该比例被认为是缓冲层。使用不同的成分,厚度和热计划来优化缓冲层。优化的缓冲层用于采用顶部种子熔体生长(TSMG)技术在氧化钇稳定的氧化锆(YSZ)衬底上制造NdBa2Cu3Oy厚膜。在TSMG技术中,在延长的时间内,使用缓冲层可有效防止大量液体(BaCuO2-CuO)与基材的剧烈相互作用。因此,获得了大的超导单畴。在Ar气氛中于0.1%O-2中对厚膜进行熔融处理,以抑制Nd1 + xBa2-xCu3Oy(Nd-123SS)固溶体的形成。所生产的厚膜具有较高的转变温度(T-C)和改进的微观结构。 (c)2005年Springer Science + Business Media,Inc.

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