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Effects of Post-Heat Treatment of Nanocrystalline ZnO Thin Films deposited on Zn-Deposited FTO Substrates

机译:Zn沉积FTO衬底上沉积的纳米ZnO薄膜的热处理后效果

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The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron microscopy (SEM), X-ray diffraction analysis, and photoluminescence (PL) measurements. The ZnO thin films were grown on Zn-deposited fluorine-doped tin oxide substrates by sol-gel spin coating. The SEM images of the samples showed that their surfaces had a mountain-chain-like structure. The film annealed at 400 degrees C had the highest degree of alignment along the c-axis, and its residual stress was close to zero. The PL spectra of the ZnO thin films consisted of sharp near-band-edge emissions (NBE) and broad deep-level emissions (DLE) in the visible range. The DLE peaks exhibited a green-to-red shift with an increase in the temperature. The highest I-NBE/I-DLE ratio was observed in the film annealed at 400 degrees C. Thus, the optimal temperature for growing high-quality ZnO thin films on Zn-deposited FTO substrates is 400 degrees C
机译:用场效应扫描电子显微镜(SEM),X射线衍射分析和光致发光(PL)测量研究了热处理温度对ZnO薄膜结构和光学性能的影响。通过溶胶-凝胶旋涂法在Zn沉积的氟掺杂氧化锡衬底上生长ZnO薄膜。样品的SEM图像显示它们的表面具有山链状结构。在400℃退火的膜具有沿c轴的最高取向度,并且其残余应力接近于零。 ZnO薄膜的PL光谱由在可见光范围内的尖锐的近带边缘发射(NBE)和宽的深能级发射(DLE)组成。随着温度的升高,DLE峰呈现出绿色到红色的偏移。在400℃退火的薄膜中观察到最高的I-NBE / I-DLE比。因此,在Zn沉积的FTO基板上生长高质量ZnO薄膜的最佳温度为400摄氏度

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