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Reliability Evaluation for a Wet-Plated Electrode with a Al/Al_2O_3/Cu Insulated Metal Substrate

机译:具有Al / Al_2O_3 / Cu绝缘金属基底的湿镀电极的可靠性评估

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摘要

The heat sink in LED chips has been a major challenge for high-power LED module design. Elevated chip temperatures cause adverse effects on LED performance, lifetime, and color. An insulated metal substrate (IMS) is the commonly used substrate and has good thermal performance and low cost. This study used an aluminum IMS with good heat radiation efficiency to solve these problems. The most traditional IMS technique is electrochemical anodization. There are various methods to form electrical conductors on anodized aluminum. In this study, the anodization process was performed on an aluminum substrate using a phosphoric acid electrolyte to form the AAO layer. This investigation confirmed that electroless Ni-P plating for seed layers could be used to substitute for the Cu-sputtering process. Our evaluation of the reliability of the different thicknesses of aluminium anodic oxidation and the electro-plated Cu electrode revealed that the maximum peel strength was 1.6 kgf/cm and it was obtained at an anodizing time of 1000 minutes. The TCT, the solder shock test and the solderability test showed that the substrates were not delaminated.
机译:LED芯片中的散热器一直是大功率LED模块设计的主要挑战。升高的芯片温度会对LED性能,寿命和颜色产生不利影响。绝缘金属基板(IMS)是常用的基板,具有良好的热性能和低成本。本研究使用具有良好散热效率的铝制IMS来解决这些问题。最传统的IMS技术是电化学阳极氧化。有多种方法可以在阳极氧化铝上形成电导体。在这项研究中,使用磷酸电解质在铝基板上执行阳极氧化工艺以形成AAO层。这项研究证实,用于种子层的化学镀Ni-P可以替代铜溅射工艺。我们对不同厚度的铝阳极氧化和电镀铜电极的可靠性的评估表明,最大剥离强度为1.6 kgf / cm,并且在1000分钟的阳极氧化时间下获得。 TCT,焊料冲击测试和可焊性测试表明,基材没有分层。

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