Interfacial phenomena in the SiC/2014Al composite: (I)Modification of interfacial characteristics

摘要

Methodologies both to avoid the formation ofAl_4C_3 and to tailor the interfacial structures in the SiC/2O14Alcomposite were demonstrated. Modification of the interfacialstructures in the SiC/2O14Al composite were made by formingSiO_2 layers on the surfaces of SiC via the passive oxidation atelevated temperatures. In the 2014Al composite reinforcedoxidized SiC, nano-sized MgAl_2O_4 and Si crystals wereobserved to form at the interfacial region as a result of the reactionbetween the SiO_2 layer and the matrix. On the other hand, in thecase of the 2014Al composite reinforced unoxidized SiC, SiCwere found to react with Al to form both Al_4C_3 and Si.Crystallographic structures of the observed interfacial productswere characterized using EDS and CBED of TEM.