Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from theGeneration Kinetics of Thermal Donors

摘要

The generation of Thermal Donors in Si is a nucleation process controlled by severalmobile O_n clusters. The rate-limiting transitions are found to be O_1→O_2 and O_4→ O_5. Theindividual transition rates G_(12)andG_(45),and alsoG_(23)34)are deduced from the experimentaldata. From the transient variation of the generation rate G(t), the equilibrium concentration of thedimers is found, and with it the dimeric diffusivity is also defined. In samples pre-treated at high T,the G(t) dependence has a maximum, due to quenched-in fast-diffusing oxygen monomers (FDMs).The concentration and diffusivity of FDMs were determined.