Raman analysis of the silicon wafer scratched by single point diamond

摘要

This paper presents a Raman analysis of the monocrystalline silicon wafer scratched by single point diamond. Si-III and Si-XII phases are found to be existence in the scratched silicon surface, which is the result of the phase transformation. A mathematical model was developed to calculating the molar concentration of phase of the silicon. Based on the mathemathical model, the relationship between the molar concentrations of the Si-I phase and the applied load was analysied.