AlGaN/GaN based heterostructures for MEMS and NEMS applications

摘要

With the increasing requirements for microelectromechanical systems (MEMS)regarding stability, miniaturization and integration, novel materials such as wide band gapsemiconductors are receiving more attention. The outstanding properties of group III-nitrides offermany more possibilities for the implementation of new functionalities and a variety of technologiesare available to realize group Ill-nitride based MEMS. In this work we demonstrate the applicationof these techniques for the fabrication of full-nitride MEMS. It includes a novel actuation andsensing principle based on the piezoelectric effect and employing a two-dimensional electron gasconfined in AIGaN/GaN heterostructures as integrated back electrode. Furthermore, the actuation offlexural and longitudinal vibration modes in resonator bridges are demonstrated as well as theirsensing properties.