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Growth of PLZT Thick Films by Polymer Modified Sol-Gel Processing forOptical Shutting

机译:聚合物修饰Sol-Gel法制备用于光学切断的PLZT厚膜

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PLZT9/65/35 thick films were prepared from the solution containing PVP360 (polyvinylpyrrolidone, with average molecular weight of 360000). With the solutions, the criticalthickness of a single PLZT layer could increase to ~624nm compared with 77nm-thick filmsprepared without PVP360. Furthermore, by adding 20~ 35% excess of Pb to the precursor solutions, the nano-porous rosette-like structures and a small amount of pyrochlore remnant, which were found very common in the PVP-modified films, could be eliminated. 35% Pb excess was also found to initiate liquid-phase sintering, leading to dense and crack-free films. The effect of Pb excess on the rosette removal and densification behavior of the films was discussed. Moreover, the optical and electrical properties of the PLZT films with 35% Pb excess were also studied.
机译:由含PVP360(聚乙烯吡咯烷酮,平均分子量为360000)的溶液制备PLZT9 / 65/35厚膜。通过这些解决方案,与不使用PVP360制备的77nm厚的薄膜相比,单个PLZT层的临界厚度可以提高到〜624nm。此外,通过在前体溶液中添加过量20〜35%的Pb,可以消除在PVP改性膜中很常见的纳米孔玫瑰状结构和少量烧绿石残留物。还发现过量35%的Pb会引发液相烧结,从而导致致密且无裂纹的薄膜。讨论了过量的铅对膜的玫瑰花结去除和致密化行为的影响。此外,还研究了铅含量超过35%的PLZT薄膜的光学和电学性质。

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