Removal of Small (<100-nm) Particles and Metal Contamination in Single-Wafer Cleaning Too.

摘要

In order to develop a pre-cleaning process for FEOL using a single wafer tool, an evaluation of a new physicochemical cleaning method, which involves spray cleaning using two fluids and no megasonics, has been conducted. The first part of this evaluation examined the factors of wafer spin rates, fluid flow rates and chemistry formulations on particle removal. Investigations on the removal of metal ion impurities and SiO_2 etching (loss) were subsequently performed using either hot NH_4OH:H_2O_2:DIW solutions with metal-chelating agents (APM+CA) or with a new cleaning method using repetitions of semi-aqueous chemistries at room temperature.