Carrier recombination activities and structural properties of small-angle boundaries in multicrystalline silicon

摘要

The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC),, At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0-10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle,. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.