Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells

摘要

Recombination properties at small-angle grain boundaries (SA-GBs) in multicrystalline silicon were evaluated. After Fe contamination, the electron-beam-induced current (EBIC) contrast at most SA-GBs became stronger, especially at >1.5°. After Al gettering, EBIC contrast of most <1.5° SA-GBs became as weak as before contamination. Then, some EBIC contrast of >1.5° SA-GBs showed comparable contrast before gettering. In addition, there were SA-GBs which have different recombination properties even with the same misorientation angle. Between these SA-GBs, there were differences in the rotation axis, boundary direction, and existence of defects. The associativity of metals might be affected by the existence of defects caused by these differences.