Polysilicon Thin-Film Transistors Based on Frequency Doubled cw-Nd:YVO_4 Laser Crystallized Silicon

摘要

N-type polysilicon Thin Film Transistors with high field effect mobility are obtained by using a cw-Nd:YVO_4 laser to crystallize the deposited amorphous silicon. This result is due to the large and undetected grains originated from the long laser irradiation time (2 ms) that lowers the cooling rate and also from the scan rate that induces similar phenomenon to the Sequential Lateral Solidification one. The experimental conditions to obtain such result are discussed in this paper.