...
首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Magnetic properties of amorphous hydrogenated carbon thin films doped by Ni
【24h】

Magnetic properties of amorphous hydrogenated carbon thin films doped by Ni

机译:Ni掺杂非晶氢化碳薄膜的磁性

获取原文
获取原文并翻译 | 示例
           

摘要

Amorphous hydrogenated carbon thin films were deposited on Si and glassceramics substrates by reactive ion-plasma magnetron sputtering. Thin films were without (a-C:H) and with Ni nanoparticles (a-C:H:Ni). Measurement of absorption coefficient in 220-850 nm spectral range using spectrophotometer and following approximation applying of Tauc method shows that obtained a-C:H thin films material has near 3.6 eV optical band gap and confirmed that this material is amorphous semiconductor. Thin films with Ni nanoparticles have a high complex permittivity ε* and permeability μ*(ε' ≈ 1000-10000, ε" ≈ 100-1500, μ' ≈10-70, μ"≈ 0.4-10). Some magnetic parameters of thin films were determined.
机译:通过反应离子-等离子体磁控溅射在硅和玻璃陶瓷基板上沉积非晶态氢化碳薄膜。薄膜不具有(a-C:H),且具有Ni纳米粒子(a-C:H:Ni)。使用分光光度计并近似应用Tauc方法在220-850nm光谱范围内测量吸收系数,表明所获得的a-C:H薄膜材料具有接近3.6eV的光学带隙,并证实该材料是非晶半导体。含镍纳米粒子的薄膜具有较高的复介电常数ε*和磁导率μ*(ε'≈1000-10000,ε“≈100-1500,μ'≈10-70,μ”≈0.4-10)。确定了薄膜。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号