Repair of Porous MSQ (p-MSQ) Films Using Monochlorosilanes Dissolved in Supercritical CO2

摘要

Fourier transform infrared (FTIR) spectroscopy, contact angle, and electrical i neasurements were used to study porous rnethyisilsesquioxane (p-MSQ) films (JSR LKD 5109) tirocessed with alkylmonochlorosilanes having chain lengths of one to eighteen carbon atoms dissolved in supercritical carbon dioxide at 155-185 atm and 55-60°C to repair oxygen ashing damage. The FTIR results showed that all chemistries reacted with silanol groups on the surface of ll e pores producing covalent Si-O-Si bonds. Self-condensation between the alkylsilanols with chain lengths above four carbon atoms produced a physisorbed residue, which was partially removed after nnsing with pure SCCO2. The hydrophobicity of the blanket p-MSQ surface was recovered, while the initial dielectric constant of 2.4 for the blanket p-MSQ surface was restored after treatment. With an increase in the length of the alkyl chain, the contact angle increased from 84° to 108° and (he dielectric constant measured on metal-insulator-semiconductor capacitors was approximately umstant in the range 2.4 ± 0.05. The monochlorosilanes restore the dielectric constant and surface p operties of mesoporous p-MSQ and are candidate pore sealing additives.