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Magnetic properties of Co thin films evaporated under normal and oblique incidence

机译:垂直和倾斜入射条件下蒸发的Co薄膜的磁性

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We have evaporated series of Co thin films under vacuum onto silicon and glass substrates at a perpendicular and oblique incidence. The thickness of the magnetic layer ranges from 20 to 400 nm. The static magnetic properties have been performed by means of magnetic force microscopy (M.F.M.) and Alternating Gradient Field Magnetometer (A.G.F.M.) techniques. The influence of the magnetic layer thickness and the deposition angle are studied. As results, it is found a decrease of the coercive field from 250 Oe, for t = 20 nm, to 95 Oe; for t = 400 nm. These Hc values for obliquely evaporated cobalt films are larger than those measured for cobalt films evaporated at normal incidence, found to be equal to a few Oe. It is also found a decrease of the anisotropy field, from 1.6 kOe for the 20 nm Co thick film to 0.95 kOe for the 200 nm Co thick film. Furthermore, an increase of these fields with the increase of the deposition angle is found, as well. The easy axis of the saturation magnetization lies in the film plane, irrespective of the substrate nature. The MFM observations were performed after in-plane ac demagnetization and stripe domains are observed, particularly for the thickest films, where the magnetocrystalline anisotropy is dominant, showing well-defined stripe patterns, inferring the weaker perpendicular anisotropies. These results, and others, are presented and discussed.
机译:我们已经将一系列的Co薄膜在真空下以垂直和倾斜的入射角蒸发到硅和玻璃基板上。磁性层的厚度为20至400nm。静磁性能已经通过磁力显微镜(M.F.M.)和交变梯度磁场磁力计(A.G.F.M.)技术进行了测定。研究了磁性层厚度和沉积角度的影响。结果发现,矫顽场从t = 20 nm时的250 Oe降低到95 Oe。对于t = 400nm。倾斜蒸发的钴膜的这些Hc值大于垂直入射时蒸发的钴膜的Hc值,发现等于几Oe。还发现各向异性场的减小,从20 nm Co厚膜的1.6 kOe到200 nm Co厚膜的0.95 kOe。此外,还发现这些场随沉积角的增加而增加。饱和磁化强度的易轴位于薄膜平面中,而与衬底的性质无关。 MFM观察是在面内交流退磁之后进行的,观察到条状磁畴,特别是对于最厚的膜,其中磁晶各向异性占主导地位,显示出清晰的条状图案,从而推断出较弱的垂直各向异性。介绍和讨论了这些结果以及其他结果。

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