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机译:斜入射电子束蒸发法制备氧化镁/氧化铝双层薄膜的电学和形貌性质
The State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;
The State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;
The State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China, Chengdu 610054, China;
Oblique angle deposition; Magnesium oxide/alumina; X-ray; SEM;
机译:电子束斜入射蒸发制备氧化铝薄膜的光学性能
机译:衬底温度对电子束蒸发法制备碲化铜薄膜的结构,形态,光学和电学性质的影响
机译:反应电子束蒸发技术制备的铟掺杂氧化银薄膜的电性能
机译:通过电子束蒸发技术制备镓掺杂氧化锌薄膜的结构,电气和光学性质
机译:电子束蒸发生长的氧化铝薄膜的沉积和表征。
机译:室温电子束蒸发制备透明导电氧化物膜的三明治结构研究
机译:电子束蒸发制备的铟锡氧化物薄膜的电性能