Structural, Electrical and Optical Properties of Gallium Doped Zinc Oxide Thin Films Prepared by Electron Beam Evaporation Technique

摘要

High quality gallium doped zinc oxide (GZO) films are prepared by electron beam evaporation technique. The effect of substrate temperature on structural, electrical and optical properties was studied in detail. The prepared films are polycrystalline in nature with c-axis perpendicular to the substrate. The resistivity of the film decreases and the optical transparency increases as the substrate temperature increases from room temperature to 150 deg C. The film produce the optical band gap of 3.47 eV.