Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO_2 Films: Role of Vacancy-Like Defects

摘要

Czochralski grown silicon (Cz-Si) samples have been investigated with positron lifetime and Doppler broadening in coincidence techniques, after pre-annealing treatments and annealing treatments. It has been found that vacancy-like defects not decorated by oxygen are present after pre-annealing treatments. When oxygen precipitates are induced by high temperature and high pressure treatments, vacancy-like defects are related to these precipitates. In as deposited Si-rich SiO_2 layer, open volume defects have been found to diminish after Ar implantation.