Positron probing of point radiation defects in proton - Irradiated FZ-silicon single crystals

摘要

The changes of the positron lifetime and loss/recovery of shallow donor states in n-FZSi: P material irradiated at the room temperature with 15 MeV protons have been investigated in the course of isochronal annealing. Thermally stable point radiation defects which begin to anneal at ～ 300 °C - 340 °C have been revealed; they manifest themselves as deep donors. It is argued that these defects involve, at least, more than one vacancy and the impurity atom (s) of phosphorus.