首页> 外国专利> High-resolution detecting defects with positrons recombination by means of simultaneous irradiation of an positron beam and of an electron beam

High-resolution detecting defects with positrons recombination by means of simultaneous irradiation of an positron beam and of an electron beam

机译:通过同时照射正电子束和电子束,通过正电子重组来高分辨率检测缺陷

摘要

PROBLEM TO BE SOLVED: To inspect the position, number, size and the like of the microflaw in a solid material of every kind inclusive of a semiconductor device or a metal material at a high speed with special resolving power with a nanometer order.;SOLUTION: A converged electron beam device is loaded with a positive electron irradiating function, and flaw position data, converged electron beam position data and the number of flaws or the size of a flaw are obtained from the detection data of γ rays generated by the pair extinction of electrons and positive electrons, and these two-dimensional distribution data are displayed on a monitor.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:以纳米级的特殊分辨力,高速检查包括半导体器件或金属材料在内的各种固体材料中的微瑕疵的位置,数量,大小等。 :具有正电子辐照功能的会聚电子束装置,并且从γ的检测数据获得缺陷位置数据,会聚电子束位置数据以及缺陷数量或缺陷尺寸。电子和正电子对灭绝产生的射线,以及这些二维分布数据显示在监视器上。版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号DE602004002031T2

    专利类型

  • 公开/公告日2007-04-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20046002031T

  • 发明设计人

    申请日2004-05-03

  • 分类号G01N23/22;H01J37/256;H01J37/26;

  • 国家 DE

  • 入库时间 2022-08-21 20:28:15

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