Experimental Studies of Defects, Implants and their Processes in Ion-Irradiated Gallium Nitride Single Crystals

摘要

This article reviews recent experimental results, obtained by the authors, on disorder accumulation, disorder recovery, and behavior of implanted species in ion-irradiated gallium nitride (GaN) single crystals. The disorder on both the Ga and N sublattices has been studied in situ using Rutherford backscattering spectrometry (RBS) and nuclear resonant scattering along the <0001> axis, while the damage states for as-irradiated and post-annealed specimens have been examined using transmission electron microscopy. The disorder accumulation has been investigated as a function of ion fluence, ion mass and irradiation temperature; disorder annealing has been studied under thermal and dynamic conditions. The behavior of gold implants in GaN during irradiation and thermal annealing also will be discussed.