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The nature and mechanism of charging of electron traps in Lu2SiO5 : Ce3+ crystals

机译:Lu2SiO5:Ce3 +晶体中电子陷阱的电荷性质和机理。

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Investigation of the thermoluminescence (TL) properties depending on the temperature, UV irradiation dose, and activator ion concentration in Lu2SiO5:Ce3+ (LSO:Ce) crystals and measurements of the decay of recombination radiation during photostimulated release of the excitation energy accumulated in these crystals showed that a part of Ce3+ impurity ions exhibit ionization leading to the injection of electrons into the conduction band. The conduction band of a LSO:Ce crystal is involved in two opposite processes: the charging of electron traps and the recombination of electrons with Ce4+ ions. The transport of electrons to the traps has a diffusion character: electrons possess a significant mobility [D(315 K) = 10(-3) cm(2)/s] and can diffuse away from the donor ions to distances exceeding the lattice parameter of the crystal. The results of experiments with controlled atomic packing of LSO:Ce nanoclusters unambiguously demonstrated the key role of the structure of oxyorthosilicates in the formation of electron traps. The existing two-center model does not provide adequate description of the properties of electron traps and TL in LSO:Ce crystals. (C) 2004 MAIK "Nauka/Interperiodica".
机译:根据温度,UV辐射剂量和Lu2SiO5:Ce3 +(LSO:Ce)晶体中活化剂离子的浓度研究热致发光(TL)特性,并测量光激发释放在这些晶体中累积的激发能期间重组辐射的衰减结果表明部分Ce3 +杂质离子表现出电离作用,导致电子注入导带。 LSO:Ce晶体的导带涉及两个相反的过程:电子陷阱的充电和电子与Ce4 +离子的重组。电子向陷阱的传输具有扩散特性:电子具有显着的迁移率[D(315 K)= 10(-3)cm(2)/ s],并且可以从供体离子扩散到超过晶格参数的距离水晶。 LSO:Ce纳米团簇的受控原子堆积实验结果清楚地证明了原硅酸氧结构在电子陷阱形成中的关键作用。现有的两中心模型不能充分描述LSO:Ce晶体中电子陷阱和TL的特性。 (C)2004 MAIK“ Nauka / Interperiodica”。

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