Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors

摘要

ZnO/Si metal-semiconductor-metal photodetectors (MSM-PDs) were subjected to high-energy electron irradiation (HEEI) to total fluence of 2 X 10~(13) cm~(-2). ZnO/Si MSM-PDs demonstrated at least 43percent greater radiation resistance than similar Si devices. Room-temperature annealing of radiation damage was observed as 63percent recovery of photocurrent over 47 days. The current transport mechanism for ZnO/Si MSM-PDs was dominated by space-charge-limited conduction (SCLC) with minimal effect on conduction regime due to HEEI. Analysis of photoluminescence (PL) data indicates that the radiation-induced defects are likely oxygen and zinc vacancies, i.e., (V_(0)~(+)) and (V_(Zn)~(-) - H~(+))~(0), respectively.