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首页> 外文期刊>Journal of Electronic Materials >Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples
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Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples

机译:Co / Sn / Cu扩散对中界面反应的耦合效应

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摘要

Co/Sn/Cu sandwich couples formed by electroplating were examined to investigate the interaction between Cu and Co across the Sn layer for various Sn thicknesses from 75 (mu)m to 580 (mu)m. At the Sn/Cu interface, both Cu_(6)Sn_(5) and Cu_(3)Sn are formed. Unlike in a binary Sn/Cu couple, Cu_(6)Sn_(5) has a spiked structure for couples with a thinner Sn layer. At the Co/Sn interface, two phases, CoSn_(3) and (Cu,Co)_(6)Sn_(5), were simultaneously observed after reaction at 200 deg C. Remarkably, the CoSn_(3) reaction layer was much thinner than that in the binary Sn/Co couple. Furthermore, only the (Cu,Co)_(6)Sn_(5) phase was formed at 150 deg C. This finding indicates that CoSn_(3) growth is significantly inhibited in Co/Sn/Cu sandwich couples due to the Cu substrate.
机译:检查了通过电镀形成的Co / Sn / Cu夹心对,以研究在厚度从75μm到580μm的各种Sn中,Cu和Co在整个Sn层之间的相互作用。在Sn / Cu界面处,形成了Cu_(6)Sn_(5)和Cu_(3)Sn。与二元Sn / Cu对不同,Cu_(6)Sn_(5)具有用于与较薄Sn层耦合的尖峰结构。在Co / Sn界面,在200摄氏度下反应后,同时观察到CoSn_(3)和(Cu,Co)_(6)Sn_(5)两相。值得注意的是,CoSn_(3)反应层很多比二元锡/钴对更薄。此外,在150摄氏度下仅形成(Cu,Co)_(6)Sn_(5)相。这一发现表明,由于Cu衬底,Co / Sn / Cu夹心对中CoSn_(3)的生长受到显着抑制。 。

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