Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing

摘要

The Ni/AlGaN interfaces in AlGaN/GaN Schottky diodes were investigated to explore the physical origin of post-annealing effects using electron beam induced current (EBIC), current-voltage (I-V) characteristics, and X-ray photoelectron spectroscopy (XPS). The EBIC images of the annealed diodes showed that the post-annealing process reduces electrically active states at the Schottky metal/AlGaN interfaces, leading to improvement of diode performance, for example a decrease in reverse leakage current and an increase in Schottky barrier heights. Pulsed I-V characteristics indicate the Fermi level is up-shifted after annealing, resulting in a larger sheet carrier density at the AlGaN/GaN interface. Unintentional oxidation of the free AlGaN surface during the post-annealing process, revealed by XPS analysis, may prevent electron trapping near the drain-side of the gate edges. We suggest that the post-annealing process under an optimized conditions can be an effective way of passivating AlGaN/GaN heterojunction field-effect transistors.