Interface Properties of ZnO Nanotips Grown on Si Substrates

摘要

ZnO nanotips have been grown on Si(100)using metalorganic chemical vapor deposition(MOCVD).The growth temperature is optimized for good crystal-Unity,morphology,and optical properties.ZnO nanotips exhibit a strong near band edge emission of -376 nm at room temperature with negligible green band emission.Pregrowth substrate treatment using diluted hydrofluoric acid(HF)and minimized oxygen exposure before the initial growth significantly reduces the interfacial SiO_2 thickness,while maintaining good morphology.An n-ZnO nanotips/p-Si diode is fabricated and its I-V characteristic is measured.The threshold voltage of the diode is found to be below 2.0 V with small reverse leakage current.The ZnO/p-Si diodes provide the possibility of integrating the ZnO nanotips with Si-based electronic devices.