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首页> 外文期刊>Journal of Electronic Materials >Effect of Process Conditions on Uniformity of Velocity and Wear Distance of Pad and Water during Chemcial mechanical Planarization
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Effect of Process Conditions on Uniformity of Velocity and Wear Distance of Pad and Water during Chemcial mechanical Planarization

机译:工艺条件对化学机械平面化过程中垫板和水的速度均匀性和摩擦磨损距离的影响

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摘要

the kinematics of conventional,rotary chemical mechanical planarization (CMP) was analyzed,and its effect on polishing results wasassessed.The authors define a novel parameter,zeta,as a "kinematic number",which includes the effects of wafter size,distance between rotation centers,and rotation ratio between wafer and pad.The analysis result suggests that velocity distribution,direction of friction force,uniformity of velocity distribution,distribution of sliding distance,and uniformity of sliding-distance distribution could be consistently expressed in terms of the kinematic number zeta.These results become more important as the wafer size increases and the requirement of within-wafer nonuniformity is more stringent.
机译:分析了传统的旋转化学机械平面化(CMP)的运动学,并评估了其对抛光效果的影响。作者定义了一个新的参数zeta作为“运动学数”,其中包括wafter尺寸,旋转距离等的影响。分析结果表明,速度分布,摩擦力方向,速度分布均匀性,滑动距离分布和滑动距离分布均匀性可以用运动学数一致地表示。 zeta:随着晶圆尺寸的增加以及晶圆内不均匀性的要求越来越严格,这些结果变得越来越重要。

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