Transport Properties of Undoped Cd_(0.9)Zn_(0.1)Te Grown by High Pressure Bridgman Technique

摘要

The electron drift mobility of undoped Cd_(0.9)Zn_(0.1)Te grown by high-pressure Bridgman method is measured by a time-of-flight technique. The sample shows a room temperature mobility and mobility lifetime product of 950 cm~(2)/Vs and 1.6×10~(-4)cm~(2)/V, respectively. The mobility increases monotonically with decreasing temperature to 3000 cm~(2)/Vs at 100 K. The dominant scattering mechanism for the electron transport is discussed by comparing with the theoretical mobility obtained by iterative solution of the Boltzmann equation.