InGaN/GaN Quantum Well Growth on Pyramids of Epitaxial Lateral Overgrown GaN

摘要

InGaN/GaN quantum wells (QW) were grown by metalorganic chemicalvapor deposition (MOCVD) on pyramids of epitaxial lateral overgrown(ELO) GaN samples. The ELO GaN samples were grown by MOCVD onsapphire (0001) substrates that were patterned with a SiN. mask.Scanning electron microscopy and cathodoluminescence (CL) imagingexperiments were performed to examine lateral variations in structureand QW luminescence energy. CL wavelength imaging (CLWI) measurementsshow that the QW peaks on the top of the grooves are red-shifted incomparison with the QW emission from the side walls. The results showthat In atoms have migrated to the top of the pyramids during the QWgrowth. The effects of V/III ratio, growth temperature as well as ELOGaN stripe orientation on the QW properties are also studied.