Application of an Electron Backscatter Diffraction Pattern to Cu Damascene-Fabricated Interconnections Filled by a High-Pressure Anneal Process

摘要

The microstructure of Cu interconnections fabricated by high-pressure annealing was evaluated using a field emission scanning electron microscope/electron backscatter diffraction pattern (FE-SEM/EBSP) technique, and the results are compared with as-deposited and normally annealed Cu films. The results show some grains extending from the bulk field to the via regions in the case of the high-pressure annealed Cu films. The existence of via holes was also observed, in which all grains were (111) oriented. This indicates that the high-pressure annealing process enables the Cu that in-fills the via holes to develop into favorable microstructures, i.e., single-crystal and with (111) orientation.