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Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers

机译:III型氮化物层中降低位错密度的模型

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摘要

In this work, we report on the results of the theoretical analysis of threading dislocation (TD) density reduction in porous III-nitride layers grown in polar orientation. The reaction-kinetics model originally developed for describing TD evolution in growing bulk layers has been expanded to the case of the porous layer. The developed model takes into account TD inclinations under the influence of the pores as well as trapping TDs into the pores. It is demonstrated that both these factors increase the probability of dislocation reactions thus reducing the total density of TDs. The mean pore diameter acts as an effective interaction radius for the reactions among TDs. The model includes the main experimentally observed features of TD evolution in porous III-nitride layers.
机译:在这项工作中,我们报告了以极性取向生长的多孔III氮化物层中螺纹位错(TD)密度降低的理论分析结果。最初开发的用于描述生长层中TD演化的反应动力学模型已扩展到多孔层的情况。开发的模型考虑了在孔隙影响下的TD倾角以及将TD捕获到孔隙中。结果表明,这两个因素均增加了位错反应的可能性,从而降低了TD的总密度。平均孔径充当TD之间反应的有效相互作用半径。该模型包括在多孔III型氮化物层中TD演化的主要实验观察到的特征。

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