Damage Formation during 1.0 MeV Si Self-Implantation at Low Temperatures

HUANG M.B.; MITCHELL I.V.

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Damage Formation during 1.0 MeV Si Self-Implantation at Low Temperatures

机译：低温下1.0 MeV Si自注入过程中的损伤形成

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来源
《Journal of Electronic Materials》 |1999年第4期|共5页
作者
HUANG M.B.; MITCHELL I.V.;
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正文语种 eng
中图分类材料;
关键词
Defect diffusion; lattice damage; MeV ion implantation; defect diffusion; Si;

机译：缺陷扩散;晶格损伤;MeV离子注入;缺陷扩散;硅;

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专利

1. Damage Formation during 1.0 MeV Si Self-Implantation at Low Temperatures [J] . HUANG M.B., MITCHELL I.V. Journal of Electronic Materials . 1999,第4期

机译：低温下1.0 MeV Si自注入过程中的损伤形成
2. Temperature-Dependent Photoluminescence Analysis of 1.0 MeV Electron Irradiation-Induced Nonradiative Recombination Centers in n+-p GaAs Middle Cell of GaInP/GaAs/Ge Triple-Junction Solar Cells [J] . Jun-Ling Wang, Tian-Cheng Yi, Yong Zheng, 中国物理快报：英文版 . 2017,第007期

机译：GaInP / GaAs / Ge三结太阳能电池n + -p GaAs中间电池中1.0 MeV电子辐照引起的非辐射复合中心的温度依赖性光致发光分析
3. 2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements [J] . Khanna S.M., Webb J. IEEE Transactions on Nuclear Science . 2000,第6期

机译：低温光致发光光谱法测量氮化镓膜的2 MeV质子辐射损伤
4. Formation of Kirkendall Voids at Low and High Aging Temperature in the Sn-0.7Cu-1.0wt.Si_3N_4/Cu Solder Joints [C] . Norainiza Saud, Flora Somidin, Najib Saedi Ibrahim, Regional Conference on Solid State Science and Technology . 2015

机译：在SN-0.7Cu-1.0wt中的低老化温度下形成Kirkendall空隙。％Si_3N_4 / Cu焊点
5. Characterization of fatigue damage in composite sandwich hull materials at low temperatures. [D] . Soni, Samirkumar. 2006

机译：复合夹层船体材料在低温下的疲劳损伤特征。
6. IRF3 helps control acute TMEV infection through IL-6 expression but contributes to acute hippocampus damage following TMEV infection [O] . Tyler C. Moore, Liz Cody, Phyllis M. Kumm, -1

机译：IRF3可通过IL-6表达帮助控制急性TMEV感染但在TMEV感染后会导致急性海马损伤
7. IRF3 helps control acute TMEV infection through IL-6 expression but contributes to acute hippocampus damage following TMEV infection [O] . Tyler C. Moore, Liz Cody, Phyllis M. Kumm, 2013

机译：IRF3有助于通过IL-6表达控制急性TMEV感染，但在TMEV感染后促进急性海马损伤
8. Surface Temperature Measurements for Ion Bombarded Si and GaAs at 1.0to 2.0MeV. [R] . lowe, l. f. kennedy, j. k. 1974

机译：离子轰击si和Gaas的表面温度测量在1.0到2.0meV。

Damage Formation during 1.0 MeV Si Self-Implantation at Low Temperatures

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